61913 tkim tc-00002869/61005qa msim tb-00000899 no.8147-1/6 http://onsemi.com 2SK3820 n-channel power mosfet 100v, 26a, 60m , to-263-2l semiconductor components industries, llc, 2013 june, 2013 features ? on-resistance r ds (on)1=45m (typ.) ? input capacitance ciss=2150pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 100 v gate-to-source voltage v gss 20 v drain current (dc) i d 26 a drain current (pulse) i dp pw 10 s, duty cycle 1% 104 a allowable power dissipation p d 1.65 w tc=25c 50 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 84.5 mj avalanche current *2 i av 26 a note : * 1 v dd =20v, l=200 h, i av =26a (fig.1) * 2 l 200 h, single pulse package dimensions unit : mm (typ) 7535-001 ordering number : en8147a ordering & package information device package shipping memo 2SK3820-dl-1e to-263-2l (sc-83, to-263) 800pcs./reel pb free packing type: dl marking electrical connection 1 3 2, 4 1 : gate 2 : drain 3 : source 4 : drain to-263-2l 10.0 5.3 1.27 0.8 2.54 2.54 13.4 9.2 7.9 1.4 1.2 0 to 0.25 2.4 1.75 0.9 3.0 1.35 0.254 4.5 8.0 1.3 0.5 123 4 2SK3820-dl-1e dl k3820 lot no. stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2SK3820 no.8147-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 100 v zero-gate voltage drain current i dss v ds =100v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d =13a 11 19 s static drain-to-source on-state resistance r ds (on)1 i d =13a, v gs =10v 45 60 m r ds (on)2 i d =13a, v gs =4v 56 80 m input capacitance ciss v ds =20v, f=1mhz 2150 pf output capacitance coss 160 pf reverse transfer capacitance crss 110 pf turn-on delay time t d (on) see fig.2 20 ns rise time t r 34 ns turn-off delay time t d (off) 185 ns fall time t f 62 ns total gate charge qg v ds =50v, v gs =10v, i d =26a 44 nc gate-to-source charge qgs 7.8 nc gate-to-drain ?miller? charge qgd 9.8 nc diode forward voltage v sd i s =26a, v gs =0v 1.0 1.2 v fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit 50 10v 0v 50 rg v dd l 2SK3820 g s d pw=10 s d.c. 1% p. g 50 g s d i d =13a r l =3.85 v dd =50v v ou t 2SK3820 v in 10v 0v v in
2SK3820 no.8147-3/6 r ds (on) -- v gs it07857 r ds (on) -- tc it07858 i d -- v ds it07855 i d -- v gs it07856 0.5 1.0 1.5 2.5 2.0 3.0 5.0 4.5 4.0 3.5 0 0 5 10 25 15 40 30 20 35 0.5 1.0 2.0 1.5 2.5 4.5 4.0 3.5 3.0 0 0 5 10 25 15 30 20 40 35 --50 --25 150 030 10 15 20 25 5 ciss, coss, crss -- v ds 5 1000 100 it07862 it07860 i s -- v sd it07859 0.1 1.0 23 57 3 10 1.0 ? y fs ? -- i d 7 7 7 5 5 2 3 5 2 3 2 3 2 10 23 57 23 5 3456789 210 20 70 120 90 100 110 80 40 50 60 30 50 130 60 70 80 90 100 110 120 20 30 40 10 0 0 25 50 75 100 125 7 7 5 5 v gs =3v 6v 8v 10v tc=25 c 25 c --25 c 25 c tc= --25 c 75 c tc=75 c v ds =10v i d =13a tc=75 c 25 c --25 c i d =13a, v gs =4v i d =13a, v gs =10v tc= --25 c 75 c 25 c v ds =10v f=1mhz coss ciss crss it07861 0.1 23 1.0 57 23 57 23 5 10 10 100 7 2 3 5 7 2 3 5 sw time -- i d t d (off) t f t d (on) t r 4v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c forward transfer admittance, ? y fs ? -- s static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a 1.5 1.2 0.3 0.6 0.9 0 0.01 0.1 1.0 10 100 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 tc=75 c 25 c --25 c v gs =0v v dd =50v v gs =10v
2SK3820 no.8147-4/6 it07811 it17015 0 0 20 40 60 80 100 120 1.65 140 160 2.0 1.5 1.0 0.5 p d -- ta 0.01 0.1 1.0 10 100 2 3 5 7 2 3 5 7 2 3 5 7 2 3 2 3 5 7 a s o 23 57 23 57 23 57 23 1.0 0.1 10 100 i dp =104a (pw 10 s) i d =26a 100 s 1ms 10ms 100ms dc operation 10 s operation in this area is limited by r ds (on). it07863 0 5 10 20 15 25 30 50 40 45 35 0 2 4 6 8 9 1 3 5 7 10 v gs -- qg v ds =50v i d =26a it07822 0 0 20 40 60 80 100 120 60 50 140 160 p d -- tc 40 30 20 10 total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain to source voltage, v ds -- v drain current, i d -- a tc=25 c single pulse case temperature, tc -- c allowable power dissipation, p d -- w ambient temperature, ta -- c allowable power dissipation, p d -- w
2SK3820 no.8147-5/6 outline drawing land pattern example 2SK3820-dl-1e mass (g) unit 1.5 * for reference mm unit: mm
2SK3820 ps no.8147-6/6 note on usage : since the 2SK3820 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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